This report is a detailed structural analysis of the Micron MT29F768G08EEHBBJ4-3R:B 96 GB 32L 3D NAND Flash Memory.
Micron's 32L NAND die features a 38 gate layer stack comprising 32 NAND cell gates and 6 additional dummy and select gates. The devices is fabricated using a 5 metal process (1-Al, 3-W and 1 Cu) with a 41 nm half bitline pitch.
The reported results are derived from scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (TEM-EDS), electron energy loss spectroscopy (TEM-EELS) and spreading resistance profiling (SRP) analyses.
Micron, the second chip vendor to commercialize 3D NAND, takes an innovative approach to potentially reducing costs.
07.13.2016 - EE Times
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